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        PC817B

        Description

        The 817 series of devices each consist of an infrared

        emitting diodes, optically coupled to a phototransistor detector

        encapsulated with green compound.The devices are in a 4-pin

        DIP package and available in wide-lead spacing and SMD option.


        Features

        ◆  Current transfer ratio(CTR: 50~600% at IF =5mA, VCE =5V)

        ◆  High isolation voltage between inputand output (Viso=5000 V rms )

        ◆  Creepage distance >7.62 mm.

        ◆  Operating temperature up to +110℃

        ◆  Compact small outline package

        ◆  Pb free and RoHS compliant. 

         

        Applications

        ◆  Programmable controllers.

        ◆  System appliances, measuring instruments.

        ◆  Telecommunication equipments.

        ◆  Home appliances, such as fan heaters, etc.

        ◆  Signal transmission between circuits of different potentials and impedances.


        Absolute maximum ratings (Ta=25℃)

        Parameter

        Symbol

        Rating

        Unit

        Input

        Forward current

        IF

        50

        mA

        Reverse voltage

        VR

        6

        V

        Power dissipation

        Derating factor (above Ta = 100)

        PD

        70

        mW

        2.9

        mW/

        Output

        Power dissipation 150 mW

        Derating factor (above Ta = 100)

        PC

        150

        mW

        5.8

        mW/

        Collector current

        IC

        50

        mA

        Collector-Emitter voltage

        VCEO

        35

        V

        Emitter-Collector voltage

        VECO

        6

        V

        Total power dissipation

        PTOT

        200

        mW

        Isolation voltage *1

        VISO

        5000

        V rms

        Operating temperature

        Topr

        -40~+110

        Storage temperature

        Tstg

        -55~+125

        Soldering temperature *2

        Tsol

        260

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